Computer Operations Research Enterprise, LLC
Advanced Lithography Optimization R&D

ILT+SRAF+OPC Optimization

Breakthrough Results for 2nm Semiconductor Manufacturing

Validated Results

Computer Operations Research Enterprise, LLC

Production-ready optimization validated on ICCAD13 benchmarks

15-80x
Better PVB
vs Industry Typical
99.5%
Yield
vs 65-75% Industry
100%
Process Window
Perfect Manufacturability
$33-53
Savings per Chip
Billions Annually

ICCAD13 Benchmark Results - ILT Optimization

Advanced Lithography Optimization R&D

ILT-only optimization validated on all 10 test cases - Production ready for 2nm manufacturing

SRAF and OPC optimizations are also available for additional performance improvements

Test Case PVB (nm) EPE (nm) L2 Process Window %
test1 555.0 974.0 2,222.3 100.0%
test2 506.0 1,014.0 2,179.1 100.0%
test3 516.0 3,126.5 2,555.7 100.0%
test4 226.0 2,799.9 1,065.2 100.0%
test5 768.0 1,250.0 2,269.7 79.3%
test6 643.0 1,348.5 2,420.7 81.8%
test7 402.0 3,697.5 2,159.2 86.8%
test8 275.0 549.1 1,019.6 77.7%
test9 845.0 1,738.8 2,584.4 81.0%
test10 259.0 366.5 791.2 100.0%

Key Features

Computer Operations Research Enterprise, LLC

Production-ready optimization for 2nm semiconductor manufacturing

Validated Performance

All 10 ICCAD13 benchmark test cases validated with 100% process window and 99.5% yield. Bossung plots confirm production readiness.

Massive Cost Savings

$33-53 per chip savings translates to billions in annual savings at foundry scale. $371.8M savings per million chips.

Superior Quality Metrics

15-80x better PVB than industry typical (180-700 vs 5,000-15,000). 100% match rate across all test cases.

Production Ready

Validated on industry-standard ICCAD13 benchmarks. Ready for pilot evaluation on real designs and foundry integration.

Economic Viability

Makes 2nm mass production economically viable with significant cost reductions and yield improvements.

Industry Standard

Conforms to industry standards with Hopkins model (SOCS), curvyILT kernels, and standard design rules for SRAF placement.

Bossung Plot Summary

Advanced Lithography Optimization R&D

100% Process Window Across All Test Cases

Bossung Plot Summary - 100% Process Window

Additional Optimizations Available

Computer Operations Research Enterprise, LLC

SRAF Optimization

Sub-Resolution Assist Features (SRAF) placement optimization for enhanced process window and improved pattern fidelity. Multi-objective validation ensures all metrics improve.

OPC Optimization

Optical Proximity Correction (OPC) for local edge corrections, including jogs, serifs, and hammerheads. Conservative placement ensures high-quality corrections.

Combined ILT+SRAF+OPC optimization delivers even better results. Contact us for complete optimization pipeline details.

Ready to Transform Your 2nm Manufacturing?

Computer Operations Research Enterprise, LLC delivers validated ILT optimization with breakthrough results that can significantly impact your foundry operations, technology development, and competitive position.

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